Discrete Semiconductor Products
BD139
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 80 V, 1.5 A, 1.25 W, TO-126, THROUGH HOLE
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Discrete Semiconductor Products
BD139
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 80 V, 1.5 A, 1.25 W, TO-126, THROUGH HOLE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BD139 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1.5 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max [Max] | 1.25 W |
| Supplier Device Package | SOT-32-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BD139 Series
These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.
The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140.
