SCT020W120G3-4AG
ActiveAUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 18.5 MOHM TYP., 100 A IN AN HIP247-4 PACKAGE
SCT020W120G3-4AG
ActiveAUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 18.5 MOHM TYP., 100 A IN AN HIP247-4 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT020W120G3-4AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 108 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V, 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 121 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3465 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 541 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | TO-247-4 |
| Vgs (Max) [Max] | 18 V, -5 V |
| Vgs(th) (Max) @ Id | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT020W120G3-4AG Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Documents
Technical documentation and resources