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8-VDFN Exposed Pad
Discrete Semiconductor Products

NTLTD7900ZR2G

Obsolete
ON Semiconductor

POWER MOSFET 20V 9A 26 MOHM DUAL N-CHANNEL MICRO8 LEADLESS

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8-VDFN Exposed Pad
Discrete Semiconductor Products

NTLTD7900ZR2G

Obsolete
ON Semiconductor

POWER MOSFET 20V 9A 26 MOHM DUAL N-CHANNEL MICRO8 LEADLESS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNTLTD7900ZR2G
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs18 nC
Input Capacitance (Ciss) (Max) @ Vds15 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-VDFN Exposed Pad
Power - Max [Max]1.5 W
Rds On (Max) @ Id, Vgs26 mOhm
Supplier Device Package8-DFN (3x3), (MICRO8 LEADLESS)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

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Description

General part information

NTLTD7900Z Series

This advanced Power MOSFET contains monolithic back-to-back zener diodes. These zener diodes provide protection from ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra-low RDS(on) and true logic level performance. This device is designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.

Documents

Technical documentation and resources