
NTLTD7900ZR2G
ObsoletePOWER MOSFET 20V 9A 26 MOHM DUAL N-CHANNEL MICRO8 LEADLESS
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NTLTD7900ZR2G
ObsoletePOWER MOSFET 20V 9A 26 MOHM DUAL N-CHANNEL MICRO8 LEADLESS
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Technical Specifications
Parameters and characteristics for this part
| Specification | NTLTD7900ZR2G |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 15 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Power - Max [Max] | 1.5 W |
| Rds On (Max) @ Id, Vgs | 26 mOhm |
| Supplier Device Package | 8-DFN (3x3), (MICRO8 LEADLESS) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTLTD7900Z Series
This advanced Power MOSFET contains monolithic back-to-back zener diodes. These zener diodes provide protection from ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra-low RDS(on) and true logic level performance. This device is designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
Documents
Technical documentation and resources