NTLTD7900Z Series

Power MOSFET 20V 9A 26 mOhm Dual N-Channel Micro8 Leadless

Catalog

Power MOSFET 20V 9A 26 mOhm Dual N-Channel Micro8 Leadless

Part	FET Feature	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Supplier Device Package	Mounting Type	Technology
ON Semiconductor NTLTD7900ZR2G	Logic Level Gate	26 mOhm	18 nC	6 A	1.5 W	8-VDFN Exposed Pad	20 V	15 pF	1 V	-55 °C	150 °C	2 N-Channel (Dual)	8-DFN (3x3) (MICRO8 LEADLESS)	Surface Mount	MOSFET (Metal Oxide)

Catalog

Power MOSFET 20V 9A 26 mOhm Dual N-Channel Micro8 Leadless

Key Features

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Designed to Withstand 4000V Human Body Model

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery life

• Logic Level Gate Drive- Can be Driven by Logic ICs

• Micro-8 Leadless Surface Mount Package- Saves Board Space

• IDSS Specified at Elevated Temperature

• Pb-Free Package is Available

Description

This advanced Power MOSFET contains monolithic back-to-back zener diodes. These zener diodes provide protection from ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra-low RDS(on) and true logic level performance. This device is designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.