Discrete Semiconductor Products
STGP20H60DF
ActiveSTMicroelectronics
600 V, 20 A HIGH SPEED TRENCH GATE FIELD-STOP IGBT
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Discrete Semiconductor Products
STGP20H60DF
ActiveSTMicroelectronics
600 V, 20 A HIGH SPEED TRENCH GATE FIELD-STOP IGBT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP20H60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 115 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 167 W |
| Reverse Recovery Time (trr) | 90 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 261 µJ, 209 µJ |
| Td (on/off) @ 25°C [custom] | 42.5 ns |
| Td (on/off) @ 25°C [custom] | 177 ns |
| Test Condition | 20 A, 10 Ohm, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGP20H60DF Series
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.