Discrete Semiconductor Products

G2R1000MT17J

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TRANS MOSFET N-CH SIC 1.7KV 5A 8-PIN(7+TAB) TO-263

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH SIC 1.7KV 5A 8-PIN(7+TAB) TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	G2R1000MT17J

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	1700 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	139 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	54 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-263-7
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
GeneSiC Semiconductor G2R1000MT17D	1700 V	N-Channel	TO-247-3	111 pF	175 °C	-55 °C	TO-247-3	11 nC	25 V	-10 V	5 A	44 W	1.2 Ohm	5.5 V	Through Hole
GeneSiC Semiconductor G2R1000MT17J	1700 V	N-Channel	TO-263-7	139 pF	175 °C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA		20 V	-10 V	3 A	54 W	1.2 Ohm	4 V	Surface Mount
GeneSiC Semiconductor G2R1000MT33J	3300 V	N-Channel	TO-263-7		175 °C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	21 nC	-5 V 20 V		4 A	74 W	1.2 Ohm	3.5 V	Surface Mount	238 pF

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General part information

N-Channel 1700 V 3A (Tc) 54W (Tc) Surface Mount TO-263-7

Technical documentation and resources