G2R1000 Series

Catalog

SIC MOSFET N-CH 4A TO247-3

Part	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
GeneSiC Semiconductor G2R1000MT17D	1700 V	N-Channel	TO-247-3	111 pF	175 °C	-55 °C	TO-247-3	11 nC	25 V	-10 V	5 A	44 W	1.2 Ohm	5.5 V	Through Hole
GeneSiC Semiconductor G2R1000MT17J	1700 V	N-Channel	TO-263-7	139 pF	175 °C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA		20 V	-10 V	3 A	54 W	1.2 Ohm	4 V	Surface Mount
GeneSiC Semiconductor G2R1000MT33J	3300 V	N-Channel	TO-263-7		175 °C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	21 nC	-5 V 20 V		4 A	74 W	1.2 Ohm	3.5 V	Surface Mount	238 pF