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SOT-23-3
Discrete Semiconductor Products

SI2307CDS-T1-BE3

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 30V 2.7A/3.5A SOT23

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SOT-23-3
Discrete Semiconductor Products

SI2307CDS-T1-BE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET P-CH 30V 2.7A/3.5A SOT23

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI2307CDS-T1-BE3
Current - Continuous Drain (Id) @ 25°C2.7 A, 3.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]6.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.1 W, 1.8 W
Rds On (Max) @ Id, Vgs88 mOhm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.49
10$ 0.42
100$ 0.29
500$ 0.23
1000$ 0.18
Digi-Reel® 1$ 0.49
10$ 0.42
100$ 0.29
500$ 0.23
1000$ 0.18
Tape & Reel (TR) 3000$ 0.16
6000$ 0.16
9000$ 0.14
30000$ 0.14

Description

General part information

SI2307 Series

P-Channel 30 V 2.7A (Ta), 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

Documents

Technical documentation and resources