Discrete Semiconductor Products

SI2307CDS-T1-E3

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MOSFET P-CH 30V 3.5A SOT23-3

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Discrete Semiconductor Products

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MOSFET P-CH 30V 3.5A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2307CDS-T1-E3

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.1 W, 1.8 W
Rds On (Max) @ Id, Vgs	88 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI2307CDS-T1-BE3	Surface Mount	3 V	20 V	340 pF	SOT-23-3 (TO-236)	88 mOhm	P-Channel	6.2 nC	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	30 V	4.5 V 10 V	1.1 W 1.8 W	2.7 A 3.5 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI2307BDS-T1-GE3	Surface Mount	3 V	20 V		SOT-23-3 (TO-236)	78 mOhm	P-Channel		SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	30 V	10 V	750 mW	2.5 A	MOSFET (Metal Oxide)	380 pF
Vishay General Semiconductor - Diodes Division SI2307CDS-T1-E3	Surface Mount	3 V	20 V	340 pF	SOT-23-3 (TO-236)	88 mOhm	P-Channel	6.2 nC	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	30 V	4.5 V 10 V	1.1 W 1.8 W	3.5 A	MOSFET (Metal Oxide)

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General part information

P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources