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Discrete Semiconductor Products

JAN1N5419US/TR

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Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 500V, 3A B-MELF TRAY T/R

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E-MELF PKG
Discrete Semiconductor Products

JAN1N5419US/TR

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 500V, 3A B-MELF TRAY T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N5419US/TR
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr1 µA
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseE, SQ-MELF
QualificationMIL-PRF-19500/411
Reverse Recovery Time (trr)250 ns
Speed200 mA, 500 ns
Supplier Device PackageD-5B
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]500 V
Voltage - Forward (Vf) (Max) @ If1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 7.50
Microchip DirectN/A 1$ 8.08

Description

General part information

JAN1N5419US-TR-Rectifier Series

This "fast recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal "Category 1" metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources

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