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ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

FCB125N65S3

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 24 A, 125 MΩ, D2PAK

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ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

FCB125N65S3

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 24 A, 125 MΩ, D2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationFCB125N65S3
Current - Continuous Drain (Id) @ 25°C24 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
Input Capacitance (Ciss) (Max) @ Vds1940 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)181 W
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.68
10$ 3.80
100$ 2.73
Digi-Reel® 1$ 5.68
10$ 3.80
100$ 2.73
Tape & Reel (TR) 800$ 2.24
NewarkEach (Supplied on Cut Tape) 1$ 6.32
10$ 4.82
25$ 4.81
50$ 4.38
100$ 3.94
250$ 3.93
500$ 3.92
1600$ 3.67
ON SemiconductorN/A 1$ 2.07

Description

General part information

FCB125N65S3 Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.