FCB125N65S3 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, D2PAK

Part	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor FCB125N65S3	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	24 A	4.5 V	10 V	Surface Mount	125 mOhm	1940 pF	MOSFET (Metal Oxide)	650 V	N-Channel	46 nC	181 W	-55 °C	150 °C	TO-263 (D2PAK)

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, D2PAK

Key Features

• 700 V @ TJ = 150 °C

• Ultra Low Gate Charge (Typ. Qg = 46 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)

• Optimized Capacitance

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on) = 105 mΩ

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.