Discrete Semiconductor Products
SCS310AMC7G
ActiveRohm Semiconductor
650V, 10A, THD, SILICON-CARBIDE (SIC) SBD
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Search across all available documentation for this part.
Discrete Semiconductor Products
SCS310AMC7G
ActiveRohm Semiconductor
650V, 10A, THD, SILICON-CARBIDE (SIC) SBD
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCS310AMC7G |
|---|---|
| Capacitance @ Vr, F | 500 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-220-2 Full Pack |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-220FM |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 130 | $ 5.54 | |
Description
General part information
SCS310AM Series
Shorter recovery time, enabling high-speed switching.
Documents
Technical documentation and resources