Catalog
650V, 10A, THD, Silicon-carbide (SiC) SBD
Description
AI
Shorter recovery time, enabling high-speed switching.
Beta
⌘K
650V, 10A, THD, Silicon-carbide (SiC) SBD
650V, 10A, THD, Silicon-carbide (SiC) SBD
| Part | Package / Case | Reverse Recovery Time (trr) | Mounting Type | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If [Max] | Technology | Speed | Operating Temperature - Junction | Capacitance @ Vr, F | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | TO-220-2 Full Pack | 0 ns | Through Hole | TO-220FM | 650 V | 50 µA | 1.5 V | SiC (Silicon Carbide) Schottky | 500 mA | 175 °C | 500 pF | 10 A |