Discrete Semiconductor Products

SI3460DDV-T1-GE3

Active

MOSFET N-CH 20V 7.9A 6TSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 20V 7.9A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3460DDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	7.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	666 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.7 W, 2.7 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI3460DDV-T1-GE3	N-Channel	Surface Mount	666 pF	8 V	-55 °C	150 °C	1.8 V 4.5 V	18 nC	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	7.9 A	1 V	28 mOhm	6-TSOP	1.7 W 2.7 W	20 V
Vishay General Semiconductor - Diodes Division SI3460BDV-T1-GE3	N-Channel	Surface Mount		8 V	-55 °C	150 °C	1.8 V 4.5 V		MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	8 A	1 V	27 mOhm	6-TSOP	2 W 3.5 W	20 V	24 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 7.9A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

Technical documentation and resources