SI3460 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 7.9A 6TSOP
| Part | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | Surface Mount | 666 pF | 8 V | -55 °C | 150 °C | 1.8 V 4.5 V | 18 nC | MOSFET (Metal Oxide) | SOT-23-6 Thin TSOT-23-6 | 7.9 A | 1 V | 28 mOhm | 6-TSOP | 1.7 W 2.7 W | 20 V | |
Vishay General Semiconductor - Diodes Division | N-Channel | Surface Mount | 8 V | -55 °C | 150 °C | 1.8 V 4.5 V | MOSFET (Metal Oxide) | SOT-23-6 Thin TSOT-23-6 | 8 A | 1 V | 27 mOhm | 6-TSOP | 2 W 3.5 W | 20 V | 24 nC |