Discrete Semiconductor Products
FDP5800
ActiveON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 80 A, 60 V, 0.0046 OHM, 20 V, 2.5 V ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
FDP5800
ActiveON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 80 A, 60 V, 0.0046 OHM, 20 V, 2.5 V ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDP5800 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 80 A, 14 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 145 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 9160 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 242 W |
| Rds On (Max) @ Id, Vgs | 6 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.25 | |
| 10 | $ 2.12 | |||
| 100 | $ 1.47 | |||
| 500 | $ 1.20 | |||
| 1000 | $ 1.11 | |||
| 2000 | $ 1.06 | |||
| Newark | Each | 1 | $ 3.63 | |
| 10 | $ 2.14 | |||
| 100 | $ 2.03 | |||
| 500 | $ 1.90 | |||
| 1600 | $ 1.77 | |||
| 3200 | $ 1.72 | |||
| ON Semiconductor | N/A | 1 | $ 1.13 | |
Description
General part information
FDP5800 Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Documents
Technical documentation and resources