FDP5800 Series

N-Channel Logic Level PowerTrench® MOSFET 60V, 80A, 6mΩ

Catalog

N-Channel Logic Level PowerTrench® MOSFET 60V, 80A, 6mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type
ON Semiconductor FDP5800	14 A 80 A	20 V	N-Channel	145 nC	MOSFET (Metal Oxide)	60 V	2.5 V	242 W	6 mOhm	9160 pF	TO-220-3	-55 °C	175 ░C	4.5 V 10 V	TO-220-3	Through Hole

Catalog

N-Channel Logic Level PowerTrench® MOSFET 60V, 80A, 6mΩ

Key Features

• RDS(on)= 4.6mΩ (Typ.) @ VGS= 10V, ID= 80A

• High performance trench technology for extermly low RDS(on)

• Low Gate Charge

• High power and current handing capability

• RoHs Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.