Discrete Semiconductor Products

STP130N8F7

Obsolete

STMicroelectronics

MOSFET N-CHANNEL 80V 80A TO220

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Search across all available documentation for this part.

Discrete Semiconductor Products

STP130N8F7

Obsolete

STMicroelectronics

MOSFET N-CHANNEL 80V 80A TO220

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP130N8F7

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Mounting Type	Through Hole
Package / Case	TO-220-3
Power Dissipation (Max)	205 W
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

STP130 Series

N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STP130N6F7	175 °C	-55 °C	42 nC	N-Channel	Through Hole	60 V	TO-220	5 mOhm	20 V	2600 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	4 V
STMicroelectronics STP130NH02L	175 °C	-55 °C		N-Channel	Through Hole	24 V	TO-220	4.4 mOhm	20 V	4450 pF	TO-220-3	5 V 10 V	MOSFET (Metal Oxide)	1 V	150 W	93 nC	90 A
STMicroelectronics STP130N8F7				N-Channel	Through Hole	80 V	TO-220		20 V		TO-220-3	4.5 V 10 V	MOSFET (Metal Oxide)		205 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	830	$ 2.30
	Tube	1	$ 1.90
		50	$ 1.53
		100	$ 1.26
		500	$ 1.06

Description

General part information

STP130 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Documents

Technical documentation and resources

No documents available