Specification	NVMTS1D6N10MCTXG

Current - Continuous Drain (Id) @ 25°C	36 A, 273 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	106 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	7630 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	291 W, 5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	8-DFNW
Supplier Device Package [x]	8.3
Supplier Device Package [y]	8.4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NVMTS1D6N10MC Series

Single N-Channel Power MOSFET 100V, 273A, 1.7mΩ

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Mounting Type	Grade	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Technology
ON Semiconductor NVMTS1D6N10MCTXG	5 W 291 W	4 V	7630 pF	8.3	8-DFNW	8.4	Surface Mount	Automotive	N-Channel	106 nC	36 A 273 A	100 V	8-PowerTDFN	20 V	-55 °C	175 ░C	1.7 mOhm	10 V	AEC-Q101	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 7.25
		10	$ 4.91
		100	$ 3.59
		500	$ 3.11
	Digi-Reel®	1	$ 7.25
		10	$ 4.91
		100	$ 3.59
		500	$ 3.11
	Tape & Reel (TR)	3000	$ 3.11
Newark	Each	500	$ 3.31
ON Semiconductor	N/A	1	$ 2.86

Description

General part information

NVMTS1D6N10MC Series

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.