NVMTS1D6N10MC Series

Single N-Channel Power MOSFET 100V, 273A, 1.7mΩ

Catalog

Single N-Channel Power MOSFET 100V, 273A, 1.7mΩ

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Mounting Type	Grade	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Technology
ON Semiconductor NVMTS1D6N10MCTXG	5 W 291 W	4 V	7630 pF	8.3	8-DFNW	8.4	Surface Mount	Automotive	N-Channel	106 nC	36 A 273 A	100 V	8-PowerTDFN	20 V	-55 °C	175 ░C	1.7 mOhm	10 V	AEC-Q101	MOSFET (Metal Oxide)

Catalog

Single N-Channel Power MOSFET 100V, 273A, 1.7mΩ

Key Features

• Small Footprint (8x8 mm)

• Low RDS(on)

• Low QGand Capacitance

• Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.