Discrete Semiconductor Products

IRFPG30PBF

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MOSFET N-CH 1000V 3.1A TO247-3

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Discrete Semiconductor Products

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MOSFET N-CH 1000V 3.1A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFPG30PBF

Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	980 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division IRFPG30PBF	TO-247AC	125 W	1000 V	Through Hole	TO-247-3	20 V	5 Ohm	80 nC	N-Channel	3.1 A	10 V	980 pF	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division IRFPG30	TO-247AC	125 W	1000 V	Through Hole	TO-247-3	20 V	5 Ohm	80 nC	N-Channel	3.1 A	10 V	980 pF	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-247AC

Technical documentation and resources