IRFPG30 Series

Catalog

MOSFET N-CH 1000V 3.1A TO247-3

Part	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division IRFPG30PBF	TO-247AC	125 W	1000 V	Through Hole	TO-247-3	20 V	5 Ohm	80 nC	N-Channel	3.1 A	10 V	980 pF	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division IRFPG30	TO-247AC	125 W	1000 V	Through Hole	TO-247-3	20 V	5 Ohm	80 nC	N-Channel	3.1 A	10 V	980 pF	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C