Discrete Semiconductor Products

BIDD05N60T

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IGBT TRENCH FS 600V 10A TO252

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Discrete Semiconductor Products

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IGBT TRENCH FS 600V 10A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	BIDD05N60T

Current - Collector Pulsed (Icm)	15 A
Gate Charge	18.5 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	82 W
Reverse Recovery Time (trr)	40 ns
Supplier Device Package	TO-252 (DPAK)
Switching Energy	70 µJ, 200 µJ
Td (on/off) @ 25°C	7 ns, 18 ns
Test Condition	15 V, 5 A, 400 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Switching Energy	Td (on/off) @ 25°C	Mounting Type	Test Condition
Bourns Inc. BIDD05N60T	Trench Field Stop	150 °C	-55 °C	18.5 nC	82 W	600 V	TO-252 (DPAK)	2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	15 A	40 ns	70 µJ 200 µJ	7 ns 18 ns	Surface Mount	5 A 10 Ohm 15 V 400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 600 V 10 A 82 W Surface Mount TO-252 (DPAK)

Technical documentation and resources