Specification	NTLLD4901NFTWG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.5 A, 6.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12 nC
Input Capacitance (Ciss) (Max) @ Vds	605 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-WDFN Exposed Pad
Power - Max	800 mW
Power - Max	810 mW
Rds On (Max) @ Id, Vgs	17.4 mOhm
Supplier Device Package	8-WDFN (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

NTLLD4901NF Series

Dual N-Channel Power MOSFET with Integrated Schottky 30V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Configuration	Technology	Drain to Source Voltage (Vdss)	Power - Max	Power - Max	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTLLD4901NFTWG	Surface Mount	-55 °C	150 °C	17.4 mOhm	2.2 V	5.5 A 6.3 A	8-WDFN Exposed Pad	Logic Level Gate	12 nC	8-WDFN (3x3)	2 N-Channel (Dual)	MOSFET (Metal Oxide)	30 V	800 mW	810 mW	605 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Dual N-Channel Power MOSFET with Integrated Schottky30 V, High Side 11 A / Low Side 13 A, Dual N−Channel, WDFN (3 mm x 3 mm)