NTLLD4901NF Series

Dual N-Channel Power MOSFET with Integrated Schottky 30V

Catalog

Dual N-Channel Power MOSFET with Integrated Schottky 30V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Configuration	Technology	Drain to Source Voltage (Vdss)	Power - Max	Power - Max	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTLLD4901NFTWG	Surface Mount	-55 °C	150 °C	17.4 mOhm	2.2 V	5.5 A 6.3 A	8-WDFN Exposed Pad	Logic Level Gate	12 nC	8-WDFN (3x3)	2 N-Channel (Dual)	MOSFET (Metal Oxide)	30 V	800 mW	810 mW	605 pF

Dual N-Channel Power MOSFET with Integrated Schottky 30V

• Co-Packaged Power Stage Solution

• Low Side MOSFET with Integrated Schottky

• Minimized Parasitic Inductances

• Optimized Devices to Reduce Power Losses

• RoHS Compliant

Dual N-Channel Power MOSFET with Integrated Schottky30 V, High Side 11 A / Low Side 13 A, Dual N−Channel, WDFN (3 mm x 3 mm)