Discrete Semiconductor Products
SCT3080KLHRC11
ActiveRohm Semiconductor
1200V, 31A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
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Discrete Semiconductor Products
SCT3080KLHRC11
ActiveRohm Semiconductor
1200V, 31A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3080KLHRC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 165 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 104 mOhm |
| Supplier Device Package | TO-247N |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT3080KLHR Series
AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources