Discrete Semiconductor Products

FCB11N60FTM

Obsolete

MOSFET N-CH 600V 11A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 11A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FCB11N60FTM

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	1490 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FCB11N60FTM	30 V	Surface Mount	-55 °C	150 °C	52 nC	10 V	11 A	600 V	N-Channel	125 W	MOSFET (Metal Oxide)	380 mOhm	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	1490 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 11A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources