Discrete Semiconductor Products

MCP87018T-U/MF

Obsolete

MOSFET N-CH 25V 100A 8PDFN

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 100A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	MCP87018T-U/MF

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	3.3 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	37 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2925 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.2 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.6 V

Part	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Microchip Technology MCP87018T-U/MF	N-Channel	8-PDFN (5x6)	1.6 V	37 nC	10 V	-8 V	25 V	MOSFET (Metal Oxide)	Surface Mount	2.2 W	3.3 V	10 V	2925 pF	8-PowerTDFN	100 A	-55 °C	150 °C	1.9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 100A (Tc) 2.2W (Ta) Surface Mount 8-PDFN (5x6)

Technical documentation and resources