onsemi-NTSB40200CTT4G Rectifiers Diode Schottky 200V 40A 3-Pin(2+Tab) D2PAK T/R

Discrete Semiconductor Products

HUF75639S3ST

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ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 56 A, 0.021 OHM, TO-263AB, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet +1

Discrete Semiconductor Products

HUF75639S3ST

Active

ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 56 A, 0.021 OHM, TO-263AB, SURFACE MOUNT

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HUF75639S3ST

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

HUF75639S3S Series

N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ

Part	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor HUF75639P3-F102	100 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-220-3	56 A	130 nC	TO-220-3	Through Hole	N-Channel	20 V	25 mOhm	4 V	200 W	10 V
ON Semiconductor HUF75639S3ST	100 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-263 (D2PAK)	56 A	130 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	20 V	25 mOhm	4 V	200 W	10 V
ON Semiconductor HUF75639G3	100 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-247-3	56 A	130 nC	TO-247-3	Through Hole	N-Channel	20 V	25 mOhm	4 V	200 W	10 V
ON Semiconductor HUF75639S3ST_Q

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	800	$ 1.14
Digikey	Cut Tape (CT)	1	$ 3.36
		10	$ 2.20
		100	$ 1.53
	Digi-Reel®	1	$ 3.36
		10	$ 2.20
		100	$ 1.53
	Tape & Reel (TR)	800	$ 1.18
		1600	$ 1.11
Newark	Each (Supplied on Cut Tape)	1	$ 4.11
		10	$ 2.92
		25	$ 2.69
		50	$ 2.47
		100	$ 2.24
ON Semiconductor	N/A	1	$ 1.18

Description

General part information

HUF75639S3S Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-418AJ-D2PAK-3 (TO-263, 3-LEAD)

Package Drawing