HUF75639S3S Series

N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ

Catalog

N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ

Part	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor HUF75639P3-F102	100 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-220-3	56 A	130 nC	TO-220-3	Through Hole	N-Channel	20 V	25 mOhm	4 V	200 W	10 V
ON Semiconductor HUF75639S3ST	100 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-263 (D2PAK)	56 A	130 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	20 V	25 mOhm	4 V	200 W	10 V
ON Semiconductor HUF75639G3	100 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-247-3	56 A	130 nC	TO-247-3	Through Hole	N-Channel	20 V	25 mOhm	4 V	200 W	10 V
ON Semiconductor HUF75639S3ST_Q

Catalog

N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ

Key Features

• 56A, 100V

• SPICE and SABER Thermal Impedance Models

• Temperature Compensated PSPICE®and SABER™ Electrical Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.