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8-SOIC
Integrated Circuits (ICs)

TC4421AVOA713

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Microchip Technology

MOSFET DRVR 10A 1-OUT LO SIDE INV 8-PIN SOIC N T/R

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8-SOIC
Integrated Circuits (ICs)

TC4421AVOA713

Active
Microchip Technology

MOSFET DRVR 10A 1-OUT LO SIDE INV 8-PIN SOIC N T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTC4421AVOA713
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]10 A
Current - Peak Output (Source, Sink) [custom]10 A
Driven ConfigurationLow-Side
Input TypeInverting
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]33 ns
Rise / Fall Time (Typ) [custom]38 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]18 V
Voltage - Supply [Min]4.5 V

TC4421A Series

9 A MOSFET Gate Driver

PartOperating Temperature [Min]Operating Temperature [Max]Number of DriversRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Package / CasePackage / Case [y]Package / Case [x]Voltage - Supply [Max]Voltage - Supply [Min]Current - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Supplier Device PackageMounting TypeDriven ConfigurationInput TypeChannel TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Package / CasePackage / CaseGate Type
8-SOIC
Microchip Technology
-40 °C
125 °C
1
33 ns
38 ns
8-SOIC
3.9 mm
0.154 in
18 V
4.5 V
10 A
10 A
8-SOIC
Surface Mount
Low-Side
Inverting
Single
8-VDFN
Microchip Technology
-40 °C
150 °C
1
33 ns
38 ns
8-VDFN Exposed Pad
18 V
4.5 V
10 A
10 A
8-DFN-S (6x5)
Surface Mount
Low-Side
Inverting
Single
8-PDIP
Microchip Technology
-40 °C
150 °C
1
8-DIP
18 V
4.5 V
9 A
9 A
8-PDIP
Through Hole
Low-Side
Inverting
Single
60 ns
60 ns
0.3 in
7.62 mm
8-VDFN
Microchip Technology
-40 °C
150 °C
1
8-VDFN Exposed Pad
18 V
4.5 V
9 A
9 A
8-DFN-S (6x5)
Surface Mount
Low-Side
Inverting
Single
60 ns
60 ns
DFN-S / 8
Microchip Technology
-40 °C
150 °C
1
8-VDFN Exposed Pad
18 V
4.5 V
9 A
9 A
8-DFN-S (6x5)
Surface Mount
Low-Side
Inverting
Single
60 ns
60 ns
8-PDIP
Microchip Technology
0 °C
150 °C
1
8-DIP
18 V
4.5 V
9 A
9 A
8-PDIP
Through Hole
Low-Side
Inverting
Single
60 ns
60 ns
0.3 in
7.62 mm
IGBT
MOSFET (N-Channel
P-Channel)
8-VDFN
Microchip Technology
-40 °C
150 °C
1
33 ns
38 ns
8-VDFN Exposed Pad
18 V
4.5 V
10 A
10 A
8-DFN-S (6x5)
Surface Mount
Low-Side
Inverting
Single
8-SOIC
Microchip Technology
-40 °C
150 °C
1
8-SOIC
5.3 mm
0.209 "
18 V
4.5 V
9 A
9 A
8-SOIJ
Surface Mount
Low-Side
Inverting
Single
60 ns
60 ns
8-SOIC
Microchip Technology
-40 °C
150 °C
1
8-SOIC
5.3 mm
0.209 "
18 V
4.5 V
9 A
9 A
8-SOIJ
Surface Mount
Low-Side
Inverting
Single
60 ns
60 ns
8-PDIP
Microchip Technology
-40 °C
150 °C
1
8-DIP
18 V
4.5 V
9 A
9 A
8-PDIP
Through Hole
Low-Side
Inverting
Single
60 ns
60 ns
0.3 in
7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3300$ 1.88
Microchip DirectT/R 1$ 2.46
25$ 2.06
100$ 1.88
1000$ 1.81
5000$ 1.80

Description

General part information

TC4421A Series

The TC4421A/TC4422A are improved versions of the earlier TC4421/TC4422 family of single-output MOSFET gate drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4421A/TC4422A have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. The TC4421A/TC4422A devices also have very low cross-conduction current, reducing the overall power dissipation of the device.

These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge.

The TC4421A/TC4422A inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the TC4421A/TC4422A family of 9 A MOSFET drivers fit into most any application where high gate/line capacitance drive is required