Discrete Semiconductor Products

FDD6512A

Obsolete

MOSFET N-CH 20V 10.7A/36A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 10.7A/36A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	FDD6512A

Current - Continuous Drain (Id) @ 25°C	36 A, 10.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19 nC
Input Capacitance (Ciss) (Max) @ Vds	1082 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	43 W, 3.8 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDD6512A	MOSFET (Metal Oxide)	TO-252AA	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	12 V	21 mOhm	2.5 V 4.5 V	3.8 W 43 W	N-Channel	10.7 A 36 A	19 nC	1082 pF	1.5 V	Surface Mount	-55 °C	175 ░C
ON Semiconductor FDD6512A	MOSFET (Metal Oxide)	TO-252 (DPAK)	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	12 V	21 mOhm	2.5 V 4.5 V	3.8 W 43 W	N-Channel	10.7 A 36 A	19 nC	1082 pF	1.5 V	Surface Mount	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources