FDD651 Series

Catalog

MOSFET N-CH 20V 10.7A/36A DPAK

Part	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDD6512A	MOSFET (Metal Oxide)	TO-252AA	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	12 V	21 mOhm	2.5 V 4.5 V	3.8 W 43 W	N-Channel	10.7 A 36 A	19 nC	1082 pF	1.5 V	Surface Mount	-55 °C	175 ░C
ON Semiconductor FDD6512A	MOSFET (Metal Oxide)	TO-252 (DPAK)	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	12 V	21 mOhm	2.5 V 4.5 V	3.8 W 43 W	N-Channel	10.7 A 36 A	19 nC	1082 pF	1.5 V	Surface Mount	-55 °C	175 ░C