Discrete Semiconductor Products

STP180N55F3

Obsolete

MOSFET N-CH 55V 120A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 120A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP180N55F3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	330 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP180N10F3	TO-220-3	100 V	20 V	MOSFET (Metal Oxide)	6665 pF	175 °C	-55 °C	315 W	5.1 mOhm	N-Channel	TO-220	120 A	10 V	4 V	Through Hole
STMicroelectronics STP180N55F3	TO-220-3	55 V	20 V	MOSFET (Metal Oxide)		175 °C	-55 °C	330 W	3.8 mOhm	N-Channel	TO-220	120 A	10 V	4 V	Through Hole	6800 pF	100 nC
STMicroelectronics STP180NS04ZC	TO-220-3		20 V	MOSFET (Metal Oxide)	4560 pF	175 °C	-55 °C	330 W	4.2 mOhm	N-Channel	TO-220	120 A	10 V		Through Hole		110 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 55 V 120A (Tc) 330W (Tc) Through Hole TO-220

Technical documentation and resources