STGSB200M65DF2AG
ActiveAUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP, 650 V, 200 A LOW-LOSS M SERIES IGBT IN AN ACEPACK SMIT PACKAGE
STGSB200M65DF2AG
ActiveAUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP, 650 V, 200 A LOW-LOSS M SERIES IGBT IN AN ACEPACK SMIT PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGSB200M65DF2AG |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 216 A |
| Current - Collector Pulsed (Icm) | 700 A |
| Gate Charge | 554 nC |
| Grade | Automotive |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 9-PowerSMD |
| Power - Max [Max] | 714 W |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 174.5 ns |
| Supplier Device Package | 9-ACEPACK SMIT |
| Switching Energy | 6.97 mJ, 3.82 mJ |
| Td (on/off) @ 25°C [custom] | 250 ns |
| Td (on/off) @ 25°C [custom] | 122 ns |
| Test Condition | 400 V, 15 V, 4.7 Ohm, 200 A |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.05 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGSB200 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting power package offers a low thermal resistance coupled with a electrical isolated top side thermal pad.