Discrete Semiconductor Products

KSP13BU

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TRANSISTOR,BJT,DARLINGTON,NPN,30V V(BR)CEO,500MA I(C),TO-92 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

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TRANSISTOR,BJT,DARLINGTON,NPN,30V V(BR)CEO,500MA I(C),TO-92 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	KSP13BU

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10000
Frequency - Transition	125 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

500 mA, 30 V NPN Darlington Bipolar Junction Transistor

Part	Supplier Device Package	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Package / Case
ON Semiconductor KSP13TF	TO-92-3	Through Hole	625 mW	500 mA	30 V	10000	1.5 V	150 °C	125 MHz	100 nA	TO-226-3 TO-92-3
ON Semiconductor KSP13TA	TO-92-3	Through Hole	625 mW	500 mA	30 V	10000	1.5 V	150 °C	125 MHz	100 nA	TO-226-3 TO-92-3
ON Semiconductor KSP13BU	TO-92-3	Through Hole	625 mW	500 mA	30 V	10000	1.5 V	150 °C	125 MHz	100 nA	TO-226-3 TO-92-3

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General part information

500 mA, 30 V NPN Darlington Bipolar Junction Transistor

Technical documentation and resources