KSP13 Series

500 mA, 30 V NPN Darlington Bipolar Junction Transistor

Catalog

500 mA, 30 V NPN Darlington Bipolar Junction Transistor

Part	Supplier Device Package	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Package / Case
ON Semiconductor KSP13TF	TO-92-3	Through Hole	625 mW	500 mA	30 V	10000	1.5 V	150 °C	125 MHz	100 nA	TO-226-3 TO-92-3
ON Semiconductor KSP13TA	TO-92-3	Through Hole	625 mW	500 mA	30 V	10000	1.5 V	150 °C	125 MHz	100 nA	TO-226-3 TO-92-3
ON Semiconductor KSP13BU	TO-92-3	Through Hole	625 mW	500 mA	30 V	10000	1.5 V	150 °C	125 MHz	100 nA	TO-226-3 TO-92-3

500 mA, 30 V NPN Darlington Bipolar Junction Transistor

• Collector-Emitter Voltage : VCES= 30 V

• Collector Power Dissipation: PC(max) = 625 mW

• High Gain Devices

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

500 mA, 30 V NPN Darlington Bipolar Junction Transistor