Specification	MTW32N20E

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	5000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MTW32N20E Series

Power MOSFET 200V 32A 75 mOhm Single N-Channel TO-247

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
ON Semiconductor MTW32N20E	32 A	TO-247-3	-55 °C	150 °C	N-Channel	Through Hole	75 mOhm	200 V	MOSFET (Metal Oxide)	TO-247	20 V	120 nC	5000 pF	4 V	10 V	180 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MTW32N20E Series

This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.