MTW32N20E Series

Power MOSFET 200V 32A 75 mOhm Single N-Channel TO-247

Catalog

Power MOSFET 200V 32A 75 mOhm Single N-Channel TO-247

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
ON Semiconductor MTW32N20E	32 A	TO-247-3	-55 °C	150 °C	N-Channel	Through Hole	75 mOhm	200 V	MOSFET (Metal Oxide)	TO-247	20 V	120 nC	5000 pF	4 V	10 V	180 W

Catalog

Power MOSFET 200V 32A 75 mOhm Single N-Channel TO-247

Key Features

• Avalanche Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSSand VDS(on)Specified at Elevated Temperature

• Isolated Mounting Hole

• Pb-Free Package is Available

Description

This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.