Specification	PHB47NQ10T,118

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	66 nC
Input Capacitance (Ciss) (Max) @ Vds	3100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	166 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PHB47NQ10T Series

N-channel TrenchMOS standard level FET

Part	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)
Nexperia USA Inc. PHB47NQ10T,118	MOSFET (Metal Oxide)	100 V	10 V	47 A	D2PAK	175 °C	-55 °C	66 nC	166 W	28 mOhm	Surface Mount	N-Channel	3100 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.15
		10	$ 1.49
		100	$ 1.14
	Digi-Reel®	1	$ 2.15
		10	$ 1.49
		100	$ 1.14
	N/A	6264	$ 3.20
	Tape & Reel (TR)	800	$ 0.85
		1600	$ 0.80
		2400	$ 0.78
		4000	$ 0.75
Mouser	N/A	1	$ 2.10
		10	$ 1.46
		100	$ 1.10
		500	$ 0.79
		800	$ 0.76
		2400	$ 0.74

Description

General part information

PHB47NQ10T Series

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.