N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET
| Part | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 100 V | 10 V | 47 A | D2PAK | 175 °C | -55 °C | 66 nC | 166 W | 28 mOhm | Surface Mount | N-Channel | 3100 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V |