Discrete Semiconductor Products

SISS30LDN-T1-GE3

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MOSFET N-CH 80V 16A/55.5A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 80V 16A/55.5A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS30LDN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	55.5 A, 16 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2070 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	4.8 W, 57 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SISS30LDN-T1-GE3	-55 °C	150 °C	50 nC	2.5 V	PowerPAK® 1212-8S	MOSFET (Metal Oxide)	80 V	Surface Mount	20 V	4.8 W 57 W	8.5 mOhm	2070 pF	N-Channel	4.5 V 10 V	PowerPAK® 1212-8S	16 A 55.5 A

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General part information

N-Channel 80 V 16A (Ta), 55.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources