SISS30 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 80V 16A/55.5A PPAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Package / Case | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 50 nC | 2.5 V | PowerPAK® 1212-8S | MOSFET (Metal Oxide) | 80 V | Surface Mount | 20 V | 4.8 W 57 W | 8.5 mOhm | 2070 pF | N-Channel | 4.5 V 10 V | PowerPAK® 1212-8S | 16 A 55.5 A |