Discrete Semiconductor Products

SIHP120N60E-GE3

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MOSFET N-CH 600V 25A TO220AB

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 25A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP120N60E-GE3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1562 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	179 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Technology	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type
Vishay General Semiconductor - Diodes Division SIHP120N60E-GE3	45 nC	120 mOhm	-55 °C	150 °C	179 W	MOSFET (Metal Oxide)	N-Channel	TO-220-3	10 V	30 V	1562 pF	TO-220AB	600 V	25 A	5 V	Through Hole

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General part information

N-Channel 600 V 25A (Tc) 179W (Tc) Through Hole TO-220AB

Technical documentation and resources