SIHP120 Series

Catalog

MOSFET N-CH 600V 25A TO220AB

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Technology	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type
Vishay General Semiconductor - Diodes Division SIHP120N60E-GE3	45 nC	120 mOhm	-55 °C	150 °C	179 W	MOSFET (Metal Oxide)	N-Channel	TO-220-3	10 V	30 V	1562 pF	TO-220AB	600 V	25 A	5 V	Through Hole