Specification	NVXK2TR40WXT

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
FET Feature	Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs [Max]	106 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1789 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	32-PowerDIP Module
Package / Case [x]	1.311 "
Package / Case [y]	33.3 mm
Power - Max [Max]	319 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	59 mOhm
Supplier Device Package	APM32
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.3 V

NVXK2TR40WXT Series

EliteSiC Power Module for OBC, 40mΩ, 1200V, 27 A, Dual Half-Bridge, in APM32 Series

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Grade	Qualification	Rds On (Max) @ Id, Vgs
ON Semiconductor NVXK2TR40WXT	4.3 V	106 nC	Silicon Carbide (SiC)	Through Hole	1789 pF	27 A	APM32	1200 V	1.2 kV	319 W	32-PowerDIP Module	33.3 mm	1.311 "	-55 °C	175 ░C	Silicon Carbide (SiC)	Automotive	AEC-Q101	59 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

EliteSiC Power Module for OBC, 40mΩ, 1200V, 27 A, Dual Half-Bridge, in APM32 Series