NVXK2TR40WXT Series

EliteSiC Power Module for OBC, 40mΩ, 1200V, 27 A, Dual Half-Bridge, in APM32 Series

Catalog

EliteSiC Power Module for OBC, 40mΩ, 1200V, 27 A, Dual Half-Bridge, in APM32 Series

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Grade	Qualification	Rds On (Max) @ Id, Vgs
ON Semiconductor NVXK2TR40WXT	4.3 V	106 nC	Silicon Carbide (SiC)	Through Hole	1789 pF	27 A	APM32	1200 V	1.2 kV	319 W	32-PowerDIP Module	33.3 mm	1.311 "	-55 °C	175 ░C	Silicon Carbide (SiC)	Automotive	AEC-Q101	59 mOhm

EliteSiC Power Module for OBC, 40mΩ, 1200V, 27 A, Dual Half-Bridge, in APM32 Series

• DIP Silicon Carbide Dual H-Bridge power module for on board charger (OBC) for xEV applications

• Creepage and clearance per IEC60664-1, IEC 60950-1

• Compact design

• Module serialization for full traceability

• Lead free, ROHS and UL94V-0 compliant

• Automotive qualified per AEC-Q101 and AQG324