Discrete Semiconductor Products
RGS80TSX2GC11
ActiveRohm Semiconductor
INSULATED GATE BIPOLAR TRANSISTOR, 40A I(C), 1200V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
RGS80TSX2GC11
ActiveRohm Semiconductor
INSULATED GATE BIPOLAR TRANSISTOR, 40A I(C), 1200V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RGS80TSX2GC11 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 104 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 555 W |
| Supplier Device Package | TO-247N |
| Td (on/off) @ 25°C | 49 ns, 199 ns |
| Test Condition | 40 A, 15 V, 600 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGS80TS65DHR Series
The RGS80TSX2 is a 10µs SCSOA guaranteed IGBT, suitable for PFC, UPS, IH and Power Conditioner. The RGS series delivers low conduction loss that contributes to reducing size and to improving efficiency of applications.
Documents
Technical documentation and resources
