Discrete Semiconductor Products

SI4505DY-T1-GE3

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MOSFET N/P-CH 30V/8V 6A 8SOIC

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Discrete Semiconductor Products

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MOSFET N/P-CH 30V/8V 6A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4505DY-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.8 A, 6 A
Drain to Source Voltage (Vdss)	8 V, 30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.2 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.8 V

Part	Technology	Drain to Source Voltage (Vdss)	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Configuration	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI4505DY-T1-GE3	MOSFET (Metal Oxide)	8 V 30 V	1.2 W	3.8 A 6 A	Surface Mount	18 mOhm	1.8 V	N and P-Channel	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	8-SOIC	20 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V, 8V 6A, 3.8A 1.2W Surface Mount 8-SOIC

Technical documentation and resources

No documents available